Effect of Ion Mass and Ion Energy on Low-Temperature Deposition of Polysrystalline-Si Thin Film on SiO_2 Layer by Using Sputtering-Type Electron Cyclotron Resonance Plasma
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-05-15
著者
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SUGIMOTO Youhei
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
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WANG Junli
Advanced Science and Technology Center for Cooperative Research, Kyushu University
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SAITOU Taishi
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
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WANG Dong
Advanced Science and Technology Center for Cooperative Research, Kyushu University
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ZHAO Liwei
Advanced Science and Technology Center for Cooperative Research, Kyushu University
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NAKASHIMA Hiroshi
Advanced Science and Technology Center for Cooperative Research, Kyushu University
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- Effect of Ion Mass and Ion Energy on Low-Temperature Deposition of Polysrystalline-Si Thin Film on SiO_2 Layer by Using Sputtering-Type Electron Cyclotron Resonance Plasma
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- Effect of Ion Mass and Ion Energy on Low-Temperature Deposition of Polycrystalline-Si Thin Film on SiO2 Layer by Using Sputtering-Type Electron Cyclotron Resonance Plasma