Structural and electrical properties of Zr oxide film for high-κ gate dielectrics by using electron cyclotron resonance plasma sputtering

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概要

• 論文の詳細を見る
• 九州大学の論文

著者

• ZHAO Liwei

  Advanced Science and Technology Center for Cooperative Research, Kyushu University

• Nam Luu

  Advanced Science And Technology Center For Cooperative Research Kyush Univ.

• Zhao Liwei

  Advanced Science And Technology Center For Cooperative Research Kyush Univ.

• Wang Junli

  Venture Business Laboratory Kyushu Univ.

関連論文

• Effect of Ion Mass and Ion Energy on Low-Temperature Deposition of Polysrystalline-Si Thin Film on SiO_2 Layer by Using Sputtering-Type Electron Cyclotron Resonance Plasma
• Growth Kinetics and Electrical Properties of Ultrathin Si Oxide Film Fabricated Using Krypton-Diluted Oxygen Plasma Excited by Electron Cyclotron Resonance
• Formation of Ultra-thin Si Oxide for High-k Gate Dielectrics Interface Engineering Using Electron Cyclotron Resonance (ECR) Plasmas Oxidation
• Structural and electrical properties of Zr oxide film for high-κ gate dielectrics by using electron cyclotron resonance plasma sputtering
• Growth Kinetics and Electrical Properties of Ultrathin Si Oxide Film Fabricated Using Krypton-Diluted Oxygen Plasma Excited by Electron Cyclotron Resonance
• Effect of Ion Mass and Ion Energy on Low-Temperature Deposition of Polycrystalline-Si Thin Film on SiO2 Layer by Using Sputtering-Type Electron Cyclotron Resonance Plasma

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