Formation of Ultra-thin Si Oxide for High-k Gate Dielectrics Interface Engineering Using Electron Cyclotron Resonance (ECR) Plasmas Oxidation
スポンサーリンク
概要
著者
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WANG Junli
Advanced Science and Technology Center for Cooperative Research, Kyushu University
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Nam Luu
Advanced Science And Technology Center For Cooperative Research Kyush Univ.
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Nam Luu
Advanced Science And Technology Center For Cooperative Research Kyushu Univ.
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Wang Junli
Advanced Science And Technology Center For Cooperative Research Kyushu Univ.
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MAKIYAMA Kazuya
Advanced Science and Technology Center for Cooperative Research, Kyushu University
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Makiyama Kazuya
Advanced Science And Technology Center For Cooperative Research Kyushu Univ.
関連論文
- Effect of Ion Mass and Ion Energy on Low-Temperature Deposition of Polysrystalline-Si Thin Film on SiO_2 Layer by Using Sputtering-Type Electron Cyclotron Resonance Plasma
- Growth Kinetics and Electrical Properties of Ultrathin Si Oxide Film Fabricated Using Krypton-Diluted Oxygen Plasma Excited by Electron Cyclotron Resonance
- Formation of Ultra-thin Si Oxide for High-k Gate Dielectrics Interface Engineering Using Electron Cyclotron Resonance (ECR) Plasmas Oxidation
- Structural and electrical properties of Zr oxide film for high-κ gate dielectrics by using electron cyclotron resonance plasma sputtering
- Growth Kinetics and Electrical Properties of Ultrathin Si Oxide Film Fabricated Using Krypton-Diluted Oxygen Plasma Excited by Electron Cyclotron Resonance
- Effect of Ion Mass and Ion Energy on Low-Temperature Deposition of Polycrystalline-Si Thin Film on SiO2 Layer by Using Sputtering-Type Electron Cyclotron Resonance Plasma