Effects of Substrate Temperature on Properties of Amorphous In

概要

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Amorphous indium gallium nitride (a-In<inf>x</inf>Ga<inf>1-x</inf>N) films were deposited at various substrate temperatures T_{\text{S}} by simultaneous reactive rf-magnetron sputtering using GaN and InN targets. The nitrogen composition ratio increased with an increase in T_{\text{S}}, and became almost the same as the stoichiometry ratio at a T_{\text{S}} above 100 °C. In the X-ray diffraction patterns of the films deposited at a T_{\text{S}} below 200 °C, no perceivable peaks assigned to crystalline In<inf>x</inf>Ga<inf>1-x</inf>N were found. In those deposited at a T_{\text{S}} above 300 °C, however, small broad peaks assigned to crystalline In<inf>x</inf>Ga<inf>1-x</inf>N were observed. The dark conductivity \sigma_{\text{d}} increased with an increase in T_{\text{S}}. On the other hand, the photoconductivty \sigma_{\text{p}} increased with an increase in T_{\text{S}} below 200 °C and a large change in \sigma_{\text{p}} was not obtained at a T_{\text{S}} above 300 °C. The photosensitivity \sigma_{\text{p}}/\sigma_{\text{d}} showed its maximum (1175) at a T_{\text{S}} of 200 °C.
2013-11-25