Preparation of Carbon Nanowall by Hot-Wire Chemical Vapor Deposition and Effects of Substrate Heating Temperature and Filament Temperature

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The preparation of carbon nanowalls (CNWs) by hot-wire chemical vapor deposition (HWCVD) and the effects of substrate heating temperature $T_{\text{h}}$ and filament temperature $T_{\text{f}}$ in this method have been investigated. The CNWs can be prepared by HWCVD using CH4 without H2 dilution. The wall size obtained from the scanning electron microscope image and the Raman peak intensity ratio of the G peak to the D peak of the sample changed with $T_{\text{h}}$ and $T_{\text{f}}$. However, both were maxima at a substrate surface temperature $T_{\text{s}}$ of 730–740 °C, which was not the same as $T_{\text{h}}$, and this result was independent of $T_{\text{f}}$. The CNWs did not grow at $T_{\text{f}}$ of 1850 °C, because the $T_{\text{f}}$ of 1850 °C was insufficient for the decomposition of CH4. On the basis of these results, we show that $T_{\text{h}}$, i.e., $T_{\text{s}}$ is a more important parameter than $T_{\text{f}}$ in the preparation of CNWs by HWCVD.
2008-11-25