Heterojunction Amorphous Silicon Solar Cells with n-Type Microcrystalline Cubic Silicon Carbide as a Window Layer

概要

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The application of phosphorus doped hydrogenated microcrystalline cubic silicon carbide (μc-3C–SiC:H) as a window layer of amorphous silicon (a-Si:H) solar cells is demonstrated. The μc-3C–SiC:H thin films were deposited by hot-wire chemical vapor deposition technique using monomethylsilane gas diluted with hydrogen. The deposition of μc-3C–SiC:H on a transparent conducting electrode (TCO) was realized by the use of titanium dioxide (TiO2) covered on the TCO. Using this covering technique, the μc-3C–SiC:H was applied to the n-layer of an n–i–p-type a-Si:H solar cell. An efficiency of 4.61% with an open circuit voltage of 0.947 V was obtained. This result indicated that the use of μc-3C–SiC:H for an n-layer will realize to achieve a higher $V_{\text{oc}}$ in the photovoltaic characteristic.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-02-15