Effects of Atmosphere and Ultraviolet Light Irradiation on Chemical Mechanical Polishing Characteristics of SiC Wafers
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概要
- 論文の詳細を見る
To establish a high-efficiency and high-quality polishing process by controlling the workpiece environment, a prototype chemical mechanical polishing (CMP) machine that can perform double-side CMP simultaneously in a sealed pressure chamber was developed. Using this new machine, polishing experiments on single crystalline silicon carbide (SiC) wafers were carried out. The results showed that applying a highly pressurized O2 gas and ultraviolet light irradiation were effective in SiC CMP.
- 2012-05-25
著者
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Ohnishi Osamu
Kyushu University
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Kurokawa Syuhei
Kyushu University, Fukuoka 836-0395, Japan
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Doi Toshiro
Kyushu University, Fukuoka 836-0395, Japan
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Aida Hideo
Namiki Precision Jewel Co., Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo 123-8511, Japan
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Ohnishi Osamu
Kyushu University, Fukuoka 819-0395, Japan
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Yamazaki Tsutomu
Kyushu University, Fukuoka 819-0395, Japan
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Uneda Michio
Kyushu University, Fukuoka 819-0395, Japan
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Yin Tao
Kyushu University, Fukuoka 819-0395, Japan
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Koshiyama Isamu
The Koshiyama Science and Technology Foundation, Kakamigahara, Gifu 509-0108, Japan
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Ichikawa Koichiro
Fujikoshi Machinery Corporation, Nagano 381-1233, Japan
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Kurokawa Syuhei
Kyushu University, Fukuoka 819-0395, Japan
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Doi Toshiro
Kyushu University, Fukuoka 819-0395, Japan
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