Growth of $\beta$-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method
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概要
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The successful growth of 2-in. $\beta$-Ga2O3 crystals by the edge-defined, film fed growth (EFG) method was demonstrated. The optimization of growth conditions for larger single crystalline $\beta$-Ga2O3 is discussed in detail. The seeding conditions of temperature and neck width were found to be the most important factors to grow single crystals. X-ray rocking curve measurements of $\beta$-Ga2O3 crystals were conducted to estimate the dislocation densities of the grown crystals. Etch pit densities (EPDs) of the $\beta$-Ga2O3 crystals were also measured using KOH solution to measure the dislocation densities. The results were discussed combining with crystal growth parameters such as neck width to clarify the mechanisms of propagation and the origin of dislocations in crystals from phenomenological and crystallographic points of view.
- 2008-11-25
著者
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Aida Hideo
Namiki Precision Jewel Co., Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo 123-8511, Japan
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Aota Natsuko
Namiki Precision Jewel Co., Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo 123-8511, Japan
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Nishiguchi Kengo
Namiki Precision Jewel Co., Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo 123-8511, Japan
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Takeda Hidetoshi
Namiki Precision Jewel Co., Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo 123-8511, Japan
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Sunakawa Kazuhiko
Namiki Precision Jewel Co., Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo 123-8511, Japan
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Yaguchi Yoichi
Namiki Precision Jewel Co., Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo 123-8511, Japan
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TAKEDA Hidetoshi
Namiki Precision Jewel Co., Ltd.
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- Growth of $\beta$-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method
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