?-Nitride Epitaxy on Atomically Controlled Surface of Sapphire Substrate with Slight Misorientation
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Aida Hideo
Namiki Precision Jewel Co., Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo 123-8511, Japan
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Aota Natsuko
Namiki Precision Jewel Co., Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo 123-8511, Japan
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Sunakawa Kazuhiko
Namiki Precision Jewel Co., Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo 123-8511, Japan
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Koyama Koji
Namiki Precision Jewel Co., Ltd., Adachi, Tokyo 123-8511, Japan
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Takeuchi Misaichi
Ritsumeikan Global Innovation Research Organization, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
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Kim Seong-woo
Namiki Precision Jewel Co., Ltd., Adachi, Tokyo 123-8511, Japan
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Suzuki Toshimasa
Nippon Institute of Technology, Miyashiro, Saitama 345-8501, Japan
関連論文
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- Growth of $\beta$-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method
- ?-Nitride Epitaxy on Atomically Controlled Surface of Sapphire Substrate with Slight Misorientation
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- Influence of Rapid Thermal Annealing and Substrate Terrace Width on Self-Organizing Formation of Periodic Straight Nanogroove Array on NiO(111) Epitaxial Thin Film
- Growth of Thick GaN Layers by Hydride Vapor Phase Epitaxy on Sapphire Substrate with Internally Focused Laser Processing