New Model of Defect Formation Caused by Retainer Ring in Chemical Mechanical Polishing

スポンサーリンク

概要

• 論文の詳細を見る

• Defect formation by retainer ring pressure in chemical mechanical polishing (CMP) was investigated. It was found that a higher retainer ring pressure causes more defects. The mechanism underlying this finding was considered to be the agglomeration of abrasive particles mixed with polished polymers from the retainer ring. Such agglomeration is accelerated by increasing the retainer ring pressure. This ring pressure exerts stress onto particles and also polishes the polymers from the ring. Lowering the retainer ring pressure and also changing the ring material from polymers, which are easy to polish, to tough materials are effective for minimizing the density of defects in CMP.

• 2013-12-25

著者

• Isobe Akira

  Kyushu University, Fukuoka 819-0395, Japan

• Komiyama Takashi

  Tokyo Seimitsu Co., Ltd., Hachioji, Tokyo 192-0032, Japan

• Kurokawa Syuhei

  Kyushu University, Fukuoka 819-0395, Japan

関連論文

• Effects of Atmosphere and Ultraviolet Light Irradiation on Chemical Mechanical Polishing Characteristics of SiC Wafers
• Mn2O3 Slurry Reuse by Circulation Achieving High Constant Removal Rate
• Mn2O3 Slurry Achieving Reduction of Slurry Waste
• Mechanisms of Local Planarization Improvement Using Solo Pad in Chemical Mechanical Polishing
• New Model of Defect Formation Caused by Retainer Ring in Chemical Mechanical Polishing
• Proposal of New Polishing Mechanism Based on Feret's Diameter of Contact Area between Polishing Pad and Wafer

スポンサーリンク