Gallic Acid as a Complexing Agent for Copper Chemical Mechanical Polishing Slurries at Neutral pH
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概要
- 論文の詳細を見る
Gallic acid was investigated as a new complexing agent for copper (Cu) chemical mechanical polishing slurries at neutral pH. Addition of 0.03 M gallic acid and 1.12 M H2O2 at pH 7 resulted in a Cu removal rate of $560.73\pm 17.49$ nm/min, and the ratio of the Cu removal rate to the Cu dissolution rate was 14.8. Addition of gallic acid improved the slurry performance compared to glycine addition. X-ray photoelectron spectroscopy analysis and contact angle measurements showed that addition of gallic acid enhanced the Cu polishing behavior by suppressing the formation of surface Cu oxide.
- 2011-05-25
著者
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Kim Jae
School Of Chemical Engineering College Of Engineering Seoul National University
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Kwon Oh
Department Of Aerospace Engineering Kaist
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Kang Min
Hynix Semiconductor Inc., Advanced Process Research and Development Division, Icheon 467-701, Korea
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Kim Yung
School of Chemical and Biological Engineering, Seoul National University, Seoul 151-744, Korea
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Kwon Oh
Department of Energy and Chemical Engineering, University of Incheon, Incheon 402-749, Korea
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Kim Jae
School of Chemical and Biological Engineering, Seoul National University, Seoul 151-744, Korea
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