Effect of Organic Additives on Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Planarization
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概要
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An increase in the removal selectivity between silicon oxide and silicon nitride was attempted by adding organic additives to a ceria slurry for the application of shallow trench isolation (STI) chemical mechanical planarization (CMP). The protection behavior of poly(acrylic acid) (PAA) and the acceleration behavior of RE-610 in a ceria slurry were studied. PAA served as a protector of the silicon nitride due to the change in zeta potential. RE-610 worked as a hydration accelerator of the silicon oxide. When the two additives were added to the ceria slurry, the removal selectivity increased to $31:1$. Moreover, PAA improved the stability of the ceria slurry.
- 2005-08-15
著者
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Kim Jae
School Of Chemical Engineering College Of Engineering Seoul National University
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Moon Doo-Kyung
Department of Materials Chemistry and Engineering, Konkuk University, Hwayang-dong, Gwangjin-gu, Seoul 143-701, Korea
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Kang Min
School of Chemical Engineering, College of Engineering, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul 151-742, Korea
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Kim Jae
School of Chemical Engineering, College of Engineering, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul 151-742, Korea
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Kim Jae
School of Chemical and Biological Engineering, Seoul National University, Seoul 151-744, Korea
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