Effects of ppm-Level Imperfection on the Transport Properties of FeSb2 Single Crystals
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概要
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The magnetic susceptibilities, electrical resistivities, Hall coefficients, and Seebeck coefficients have been measured for single crystals of a narrow-gap semiconductor of FeSb2 prepared using Sb metals of different purities. Below 40 K, carriers supplied from impurities of the Sb metal used as the raw material determine the transport quantities, making them very sensitive even to a ppm-level impurity concentration. The Seebeck coefficients observed here is as large as {\sim}{-1400} μV/K at 20 K for crystals prepared using Sb of 99.9999% purity. We have not observed, however, the colossal value of {\sim}{-45} mV/K reported by other group, even for the samples having almost equal impurity concentrations to those used in their work. Only the concentration dependence of S has been found to be similar to that of the previous data.
- 2011-05-15
著者
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Terasaki Ichiro
Department Of Applied Physics The University Of Tokyo
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Takahashi Hidefumi
Department Of Physics Division Of Material Science Nagoya University
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Sato Masatoshi
Department Of Agro-environmental Science Obihiro University Of Agriculture And Veterinary Medicine
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Yasui Yukio
Department Of Physics Division Of Material Science Nagoya University
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Terasaki Ichiro
Department of Physics, Division of Material Science, Nagoya University, Nagoya 464-8602, Japan
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Takahashi Hidefumi
Department of Physics, Division of Material Science, Nagoya University, Nagoya 464-8602, Japan
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