Photo-Seebeck Effect in ZnO
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概要
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We examine how the photo-induced carriers contribute the thermoelectric transport, i.e., the nature of the photo-Seebeck effect, in the wide-gap oxide semiconductor ZnO for the first time. We measure the electrical conductivity and the Seebeck coefficient with illuminating light. The light illumination considerably changes the Seebeck coefficient as well as the conductivity, which is sensitive to the photon energy of the illuminated light. By using a simple parallel-circuit model, we evaluate the contributions of the photo-induced carriers to the conductivity and the Seebeck coefficient, whose relationship shows a remarkable resemblance to that in doped semiconductors. Our results also demonstrate that the light illumination increases both the carrier concentration and the mobility, which can be compared with impurity-doping case for ZnO. Future prospects for thermoelectrics using light are discussed.
- 2012-11-15
著者
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Terasaki Ichiro
Department Of Applied Physics The University Of Tokyo
-
Okazaki Ryuji
Department Of Earth And Planetary Sciences Faculty Of Sciences Kyushu University
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Yasui Yukio
Department Of Physics Division Of Material Science Nagoya University
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Horikawa Ayaka
Department of Physics, Nagoya University, Nagoya 464-8602, Japan
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Okazaki Ryuji
Department of Physics, Nagoya University, Nagoya 464-8602, Japan
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