Vertical Liquid Crystal Orientation on Amorphous Tantalum Pentoxide Surfaces Depending on Anisotropic Dipole--Dipole Interaction via Ion Beam Irradiation
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概要
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We achieved vertically aligned (VA) liquid crystals (LCs) on amorphous tantalum pentoxide (Ta2O5) alignment films deposited by radio frequency (rf) magnetron sputtering using ion beam (IB) irradiation. By analyzing measurements by X-ray photoelectron spectroscopy (XPS), we confirmed the bond breaking, as detected from the O 1s spectra, which caused an isotropic dipole--dipole interaction between the LC molecules and the Ta2O5 alignment film to uniformly align the vertical LC molecular orientation as a function of IB energy density. Moreover, by examining the electro-optical (EO) characteristics of the Ta2O5 surfaces compared with those of the polyimide (PI) alignment layer, we confirmed that Ta2O5 has a low threshold voltage and a low power consumption when used as an LC alignment layer.
- 2011-03-25
著者
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SEO Dae-Shik
Department of Electrical and Computer Engineering, Yonsei University
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Kim Young-hwan
Department Of Electrical And Electronic Engineering Yonsei University
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Seo Dae-shik
Department Of Electrical & Computer Engineering College Of Engineering Yonsei University
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KIM Byoung-Yong
Department of Electrical and Electronic Engineering, College of Engineering, Yonsei University
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Kim Byoung-yong
Department Of Electrical And Electronic Engineering College Of Engineering Yonsei University
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Lee Jong-Jin
Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of K
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Kim Hyung-Jun
Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of K
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Kang Young-Gu
Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of K
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Park Hong-Gyu
Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of K
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Kim Hyung-Jun
Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of Korea
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Kim Young-Hwan
Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of Korea
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Kim Byoung-Yong
Department of Electrical and Electronic Engineering (C-724), College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Kim Byoung-Yong
Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of Korea
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Lee Jong-Jin
Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of Korea
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Kang Young-Gu
Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of Korea
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Park Hong-Gyu
Department of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea
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Park Hong-Gyu
Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of Korea
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