Effects of Defects in SiO2 Thin Films Prepared on Polyethylene Terephthalate by High-Temperature E-beam Deposition
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概要
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In this study, we characterized silicon oxide (SiO2) thin film prepared on polyethylene terephthalate (PET) substrates by electron-beam (e-beam) deposition for transparent barrier application. As the chamber temperature is increased from 30 to 110 °C, the roughness increases while water vapor transmission rate (WVTR) decreases. Under these conditions, WVTR of PET can be reduced from a level of 0.57 g/m2/day (bare subtrate) to 0.05 g/m2/day after application of a 200-nm-thick SiO2 coating at 110 °C. A more efficient way to improve permeation of PET was carried out by using a double sided coating of a 5-μm-thick parylene film. It was found that WVTR for PET substrates can be reduced to a level of $-0.2$ g/m2/day. The double-sided parylene coating on PET could contribute in lowering the stress of oxide film, which greatly improves the WVTR data. These results indicate that the SiO2/parylene/PET barrier coatings have a high potential for flexible organic light-emitting diode (OLED) applications.
- 2006-08-25
著者
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Seo Dae-shik
Department Of Electrical & Computer Engineering College Of Engineering Yonsei University
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Kang Hee-jin
Department Of Electrical And Electronic Engineering Yonsei University
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Kim Jong-hwan
Department Of Electrical And Electronic Engineering College Of Engineering Yonsei University
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Han Jin-Woo
Department of Electrical and Electronic Engineering (C-724), College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Han Jin-Woo
Department of Electrical and Electronic Engineering, College of Engineering, Yonsei University, 134 Shincon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Kang Hee-Jin
Department of Electrical and Electronic Engineering, College of Engineering, Yonsei University, 134 Shincon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Seo Dae-Shik
Department of Electrical and Electronic Engineering, College of Engineering, Yonsei University, 134 Shincon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Kim Jong-Hwan
Department of Electrical and Electronic Engineering, College of Engineering, Yonsei University, 134 Shincon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Kim Jong-Hwan
Department of Electrical & Electronic Engineering, College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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