Organic Thin Film Transistors Fabricated with a Triisopropylsilyl–Pentacene Active Channel Layer and Multi stacked Oxide Electrodes

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We report the fabrication of triisopropylsilyl (TIPS)–pentacene-based thin-film transistors (TFTs) consisting of a nickel oxide–indium tin oxide (NIO–ITO) multi stacked source/drain (S/D) electrode, a poly(4-vinylphenol) (PVP) gate dielectric, and a Ni gate electrode. The NiO–ITO multi stacked S/D electrode work function agrees well with to that of the TIPS–pentacene active channel layer. The TIPS–pentacene-based TFT maximum saturation current is about 9.1 μA at a gate bias of $-40$ V, representing a high field effect mobility of 0.03 cm2 V-1 s-1 in the dark, and the on/off current ratio TFT is about $10^{5}$. We concluded that combining the NiO–ITO multi stacked S/D electrodes with PVP for the gate dielectric yields a high-quality TIPS–pentacene-based TFT.
2009-01-25