Liquid Crystal Alignment Effects on SiNx Thin Film Layers Treated by Ion-Beam Irradiation
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概要
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Nematic liquid crystal (NLC) alignment effects on SiNx thin film layers treated by ion-beam irradiation for three types of N ratio were successfully studied for the first time. The SiNx thin film was deposited by plasma-enhanced chemical vapor deposition using three types of N ratio. To characterize the film, atomic force microscopy was performed. Good LC aligning capabilities on the SiNx thin film treated by ion-beam irradiation for all N ratios can be achieved. The low pretilt angle for an NLC on the SiNx thin film treated by ion-beam irradiation was observed and could be adopted in planar alignment liquid crystal display applications as in-plane switching and fringe-field switching modes.
- 2007-12-15
著者
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Han Jin-woo
Department Of Electrical And Electronic Engineering Yonsei University
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Kim Young-hwan
Department Of Electrical And Electronic Engineering Yonsei University
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Oh Byeong-yun
Department Of Materials Science And Engineering Yonsei University
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Seo Dae-shik
Department Of Electrical & Computer Engineering College Of Engineering Yonsei University
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Kim Byoung-yong
Department Of Electrical And Electronic Engineering College Of Engineering Yonsei University
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Kim Jong-hwan
Department Of Electrical And Electronic Engineering College Of Engineering Yonsei University
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Hwang Jeoung-yeon
Department Of Electrical & Computer Engineering College Of Engineering Yonsei University
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Kang Dong-hun
Department Of Electrical And Electronic Engineering College Of Engineering Yonsei University
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Ok Chul-Ho
Department of Electrical and Electronic Engineering (C-724), College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Han Jeong-Min
Department of Electrical and Electronic Engineering (C-724), College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Lee Sang-Keuk
Department of Electrical and Electronic Engineering, College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Han Jin-Woo
Department of Electrical and Electronic Engineering (C-724), College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Han Jin-Woo
Department of Electrical and Electronic Engineering, College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Seo Dae-Shik
Department of Electrical and Electronic Engineering, College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Kang Dong-Hun
Department of Electrical and Electronic Engineering, College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Kang Dong-Hun
Department of Electrical and Electronic Engineering (C-724), College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Kim Byoung-Yong
Department of Electrical and Electronic Engineering (C-724), College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Oh Byeong-Yun
Department of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea
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Hwang Jeoung-Yeon
Department of Electrical and Electronic Engineering, College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Lee Sang-Keuk
Department of Electrical and Electronic Engineering (C-724), College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Kim Jong-Hwan
Department of Electrical & Electronic Engineering, College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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Oh Byeong-Yun
Department of Electrical and Electronic Engineering, College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea
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