Growth and Electrical Properties of 3C-SiC/Nanocrystalline Diamond Layered Films

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概要

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• Cubic silicon carbide (3C-SiC)/nitrogen-incorporated nanocrystalline diamond layered films are prepared on p-type Si(100) substrates by carbonization and chemical vapor deposition in moderate-pressure microwave plasmas. X-ray diffraction, cross-sectional transmission electron microscopy, and energy dispersive X-ray spectroscopy reveal that epitaxial 3C-SiC thin layers about 10 nm thick with very high phase-purity are grown at the interface of Si and nanocrystalline diamond. The infrared absorption coefficient for the 3C-SiC layer is estimated to be around 420000 cm-1. The p-Si/3C-SiC/n-nanocrystalline diamond junction in a diode configuration shows rectification in the current--voltage measurement. Structural defects and surface roughening of the SiC layers are highly responsible for increasing the reverse leakage current and thus lowering the diode performance.

• 2011-01-25

著者

• KATO Yoshimine

  Department of Materials Science & Engineering, Kyushu University

• Goto Masaki

  Department Of Biological Science And Technology University Of Tokushima Graduate School

• Yamada Kazuhiro

  Department Of Applied Physics And Physico-informatics Faculty Of Science And Technology Keio University

• Teii Kungen

  Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• TEII Kungen

  Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University

• Goto Masaki

  Department of Materials Science and Engineering, Kyushu University, Fukuoka 819-0395, Japan

• Koga Akira

  Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• YAMADA Kazuhiro

  Department of Agricultural Chemistry, Tokyo University of Agriculture

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