Electrical Characteristics of TiSi2 Nanocrystal Nonvolatile Memory with Barrier-Engineered Tunnel Layer

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In this study, we fabricated TiSi2 nanocrystal nonvolatile memory devices with silicon nitride–oxide–nitride (NON) and SiO2 tunnel barriers. The TiSi2 nanocrystals with diameters of 2–5 nm and a density of $1.5 \times 10^{12}$ cm-2 were formed using radio frequency magnetron sputtering in argon and a postannealing process. The memory effect of the TiSi2 nanocrystal memory device with the NON tunnel barrier was observed at about 0.7 V at 100 ms when the applied program/erase voltages were +7 V/$-7$ V. Also, the memory window of the NON tunnel barrier device was maintained up to 1.3 V after $10^{3}$ s. These results indicate that the NON tunnel barrier provides an effective tunneling thickness for the fast program/erase speeds and an adequate physical thickness for long charge retention characteristics in nonvolatile memory devices.
2010-06-25