Iron Nanowire Formation in Si(110)

概要

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One-dimensional (1D) iron silicides prepared under various growth conditions have been studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and X-ray photoelectron spectroscopy (XPS). The nanowires (NWs) are formed in an ultrahigh vacuum (UHV) of below $5.0\times 10^{-8}$ Pa by solid-phase epitaxy (SPE) or reactive-deposition epitaxy (RDE). The sizes of the NWs obtained by SPE and RDE are 1.0–2.0 nm (height) $\times$ 6–15 nm (width) $\times$ 20–120 nm (length) and 2.0–4.0 nm (height) $\times$ 15–20 nm (width) $\times$ 100–1000 nm (length), respectively. The difference in shape is briefly discussed on the basis of the nucleation and growth theory. A similar chemical shift in XPS spectra is observed on both surfaces, corresponding to iron disilicide. NWs are also formed even in a high vacuum (HV) of below $4.0\times 10^{-4}$ Pa at 600 °C, the morphology of which is characterized by cross-sectional TEM, which clearly shows endotaxial growth.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-07-25