Temperature-Dependent Contrasts of Lateral $ p^{+}$–$n$ Junctions on H/Si(100) Imaged with Photoemission Electron Microscopy
スポンサーリンク
概要
- 論文の詳細を見る
The temperature dependence of contrasts on a H/Si(100) surface with lateral $ p^{+}$–$n$ junctions has been studied for the first time by photoemission electron microscopy. It is found that the intensity ratio of photoelectrons from the $ p^{+}$-region to that from the $n$-region varies with temperature. This temperature dependence arises mainly from the change in the band bending of $n$-region. The change can be qualitatively explained by the balance between the higher pinned position of Fermi level induced by hydrogen-termination and surface photovoltage, followed with the further shift of the pinned Fermi level to intrinsic one at higher temperatures.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-11-10
著者
-
Ueda Kazuyuki
Nano High Tech Res. Center Toyota Technological Inst.
-
Yoshimura Masamichi
Nano High-tech Research Center Toyota Technological Insitute
-
Fukidome Hirokazu
Nano High-tech Research Center Toyota Technological Institute
関連論文
- Development of Four-Probe Microscopy for Electric Conductivity Measurement
- Simultaneous Measurement of Topography and Contact Current by Contact Mode Atomic Force Microscopy with Carbon Nanotube Probe
- Temperature-Dependent Contrasts of Lateral p^+-n Junctions on H/Si(100) Imaged with Photoemission Electron Microscopy
- A Study of Adsorption of CO on Hydrogen Covered Pt(111) Surface Using Electron-Stimulated Desorption Spectroscopy
- Growth of Carbon Nanowalls on a SiO_2 Substrate by Microwave Plasma-Enhanced Chemical Vapor Deposition
- Microwave Plasma-Enhanced Chemical Vapor Deposition of Carbon Nanostructures Using Biological Molecules
- Visualization of Hydrogen on Ti-6Al-4V Using Hydrogen Microscope
- Palladium Thin-Films on Clean and Hydrogen-Terminated Si(110): The Effect of Hydrogen Termination on Metal Adsorption
- Fabrication of Carbon Nanostructure onto the Apex of Scanning Tunneling Microscopy Probe by Chemical Vapor Deposition
- Regrowth of Carbon Nanotube Array by Microwave Plasma-Enhanced Thermal Chemical Vapor Deposition
- Synthesis of Carbon Nanocoils by Two-step Growth Method Using Microwave Plasma-Enhanced Chemical Vapor Deposition
- Evaporation and Thermionic Emission Processes of Pb/W(110) Imaged In Situ by Emission Electron Microscopy
- Initial Stages of Platinum Silicide Formation on Si(110) Studied by Scanning Tunneling Microscopy
- One-Dimensional Growth of Iron Silicides on Si(553) Surface
- Microscopic Changes of Thin Films of Directly Thiolated Fullerenes Depending on Substrate and Number of Thiol
- Iron Nanowire Formation in Si(110)
- Microwave Plasma-Enhanced Chemical Vapor Deposition of Carbon Nanostructures Using Biological Molecules
- Atomic Structure of Si(553) Surface Revealed by Scanning Tunneling Microscopy
- Development of Four-Probe Microscopy for Electric Conductivity Measurement
- Growth of Carbon Nanowalls on a SiO2 Substrate by Microwave Plasma-Enhanced Chemical Vapor Deposition
- Temperature-Dependent Contrasts of Lateral $ p^{+}$–$n$ Junctions on H/Si(100) Imaged with Photoemission Electron Microscopy