Growth of Carbon Nanowalls on a SiO2 Substrate by Microwave Plasma-Enhanced Chemical Vapor Deposition
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概要
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We investigated the growth process of carbon nanowalls (CNWs) on a SiO2 substrate by microwave plasma-enhanced chemical vapor deposition (MPECVD). It is revealed that the CNWs are grown at the fine-textured structure on the SiO2 and the growth process does not require the catalyst. The CNW initially has a semicircular shape. The height, thickness, and mesh size increase with growth time. It is found that the height of CNWs as a function of time obeys the square root law. Extremely high growth rate, approximately 10 μm/h, is achieved, in contrast to previous studies.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Ueda Kazuyuki
Nano High Tech Res. Center Toyota Technological Inst.
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Tanaka Kei
Nano High-tech Research Center Toyota Technological Institute
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Yoshimura Masamichi
Nano High-tech Research Center Toyota Technological Insitute
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Okamoto Atsuto
Toyota Central R&D Lab., Inc., Nagakute, Aichi 480-1192, Japan
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Yoshimura Masamichi
Nano High-Tech Research Center, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
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