Development of Four-Probe Microscopy for Electric Conductivity Measurement
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概要
- 論文の詳細を見る
A four-probe microscope consisting of independently driven actuators has been developed in a scanning electron microscope chamber. By using an automatic probe approaching system, the resistivity of a Si(111) wafer is measured by the four-point probe method with the probe spacing changed from 18 μm to 500 μm. The measured voltage vs probe spacing curve is highly reproducible and is qualitatively in good agreement with the expected behavior, taking into account the correction factor for a non-semi-infinite medium.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-03-15
著者
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Ueda Kazuyuki
Nano High Tech Res. Center Toyota Technological Inst.
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Yoshimura Masamichi
Nano High-tech Research Center Toyota Technological Insitute
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Ishikawa Makoto
Nano High-tech Research Center Toyota Technological Institute
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Ishikawa Makoto
Nano High-Tech Research Center, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
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