Synthesis and Characterization of Zinc-Doped Amorphous Carbon Films by Plasma-Assisted Organometallic Chemical Vapor Deposition

概要

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Zinc (Zn)-doped hydrogenated amorphous carbon (a-C:H) films have been fabricated from zinc acetylacetonate by organometallic chemical vapor deposition (CVD). Zn concentration was controlled by a heated flow controller. Deposited films were Zn-doped hydrogenated oxygenated amorphous carbon films because they consisted of carbon, hydrogen, zinc, and oxide. The maximum concentration ratio of zinc to carbon (Zn/C) was as large as 0.069. Depletion of the film resistivity $R$ was found when Zn concentration $C_{\text{Zn}}$ increased. Activation energy derived from the relationship between $R$ and $C_{\text{Zn}}$ changed from 38.2 to 7.1 meV when Zn/C ratio increased from 0.008 to 0.069. Photovoltaic characteristics of a Zn-doped a-C:O:H/n-Si cell also depend on the Zn concentration. Above the ratio of $\text{Zn/C}=0.019$ in the Zn-doped a-C:O:H layer, the polarity relationship of n-Si was inversely proportional against the polarity of the film deposited at the lowest Zn concentration of $\text{Zn/C}=0.008$. The open-circuit voltage and short-circuit current of a device consisting of n-Si and Zn-doped a-C:O:H films were 93 mV and 0.16 μA/W when Zn/C was 0.019, respectively. These results show that organometallic CVD using a solid organometallic complex is a promising method of fabricating metal-doped a-C:H films for electrical applications.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-03-25