Electrostatic-Discharge-Induced Degradation Caused by Argon Ion Bombardment in Facet-Coating Process of GaInAsP/InP Laser Diode

概要

論文の詳細を見る
Electrostatic discharge (ESD)-induced degradation is one of the most important reliability issues of GaInAsP/InP laser diodes. We investigated the relation between ion irradiation in the facet-coating process and ESD-induced degradation. We used electron-beam evaporation with two types of argon ion irradiation for facet-coating. One type of irradiation is used for facet cleaning, in which argon ions bombard the facet directly. Although the ion energy was as low as 40 eV, a lack of phosphorus and enhanced oxidation were found on the ion-irradiated surface. Furthermore, an increase in the surface recombination current and the enhancement of ESD-induced degradation were observed by extending the ion irradiation time. The other type of irradiation is used to promote evaporation. Here, argon ions do not bombard the facet directly. Thus, it had little effect on ESD-induced degradation. From these results, we successfully confirmed that direct ion irradiation increases surface recombination and accelerates ESD-induced degradation even if the ion energy is as low as 40 eV.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-10-25