Ito Masashi | Optical Transmission Components Division, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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概要
- Ito Masashiの詳細を見る
- 同名の論文著者
- Optical Transmission Components Division, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japanの論文著者
関連著者
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Ito Masashi
Optical Transmission Components Division, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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HAMADA Kotaro
Analytical Characterization Center, Sumitomo Electric Industries, Ltd.
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Kimura Atsushi
Analysis Technology Research Center Sumitomo Electric Industries Ltd.
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Nakabayashi Takashi
Optical Transmission Components Division, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Ichikawa Hiroyuki
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Yamaguchi Akira
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Kimura Atsushi
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Saito Yoshihiro
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Nakamura Motonori
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Yamaguchi Koji
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Ichikawa Hiroyuki
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Yamaguchi Akira
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Hamada Kotaro
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
著作論文
- Electrostatic-Discharge-Induced Degradation Caused by Argon Ion Bombardment in Facet-Coating Process of GaInAsP/InP Laser Diode
- Characterization of SiNx/GaxIn1-xAs Interface using Hard X-ray Photoemission Spectroscopy