Hamada Kotaro | Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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概要
- Hamada Kotaroの詳細を見る
- 同名の論文著者
- Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japanの論文著者
関連著者
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Hamada Kotaro
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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HAMADA Kotaro
Analytical Characterization Center, Sumitomo Electric Industries, Ltd.
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Ichikawa Hiroyuki
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Yamaguchi Akira
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Nakabayashi Takashi
Optical Transmission Components Division, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Ichikawa Hiroyuki
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Yamaguchi Akira
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Tsurumi Daisuke
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., Yokohama 244-8588, Japan
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Nakabayashi Takashi
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Fujimori Naoji
Itami Research Laboratories, Sumitomo Electric Industries, Ltd.
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Imai T
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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Imai Takahiro
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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Fujimori N
Sumitomo Electric Ind. Ltd. Hyogo Jpn
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Fujimori Naoji
Itami Research Laboratories Sumitomo Electric Ind. Ltd.
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Imai T
Nippon Telegraph And Telephone Corp. Ibaraki Jpn
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Hamada K
Ulsi Device Development Laboratories Nec Corporation
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Nishibayashi Yoshiki
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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TSUNO Takashi
Itami Research Laboratories, Sumitomo Electric Industries, Ltd.
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Tsuno Takashi
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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Tsuno T
Nihon Univ. Chiba Jpn
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Matsukawa Shinji
Analysis Technology Research Center Sumitomo Electric Industries Ltd.
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Ito Masashi
Optical Transmission Components Division, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Matsukawa Shinji
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Fukuda Chie
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Kumagai Akiko
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Hamada Kotaro
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., Yokohama 244-8588, Japan
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Fukuda Chie
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Kawasaki Yuji
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., Yokohama 244-8588, Japan
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Imai Takahiro
Itami Laboratory, Sumitomo Electric Industries, Ltd., 1-1-1, Koyakita, Itami, Hyogo 664
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Fujimori Naoji
Itami Laboratory, Sumitomo Electric Industries, Ltd., 1-1-1, Koyakita, Itami, Hyogo 664
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Nishibayashi Yoshiki
Itami Laboratory, Sumitomo Electric Industries, Ltd., 1-1-1, Koyakita, Itami, Hyogo 664
著作論文
- Epitaxially Grown Diamond (001) 2×1/1×2 Surface Investigated by Scanning Tunneling Microscopy in Air
- Facet Passivation of GaInAsP/InP Edge-Emitting Laser Diode by Aluminum Ultrathin Layer Insertion
- Energy-Filtered Secondary-Electron Imaging for Nanoscale Dopant Mapping by Applying a Reverse Bias Voltage
- Electrostatic-Discharge-Induced Degradation Caused by Argon Ion Bombardment in Facet-Coating Process of GaInAsP/InP Laser Diode
- Relationship between Reverse-Biased Electrostatic-Discharge Tolerance and Aging of GaInAsP/InP Buried-Heterostructure Laser Diodes
- Failure Analysis of InP-Based Edge-Emitting Buried Heterostructure Laser Diodes Degraded by Forward-Biased Electrostatic Discharge Tests
- Sensitive Site-Specific Dopant Mapping in Scanning Electron Microscopy on Specimens Prepared by Low Energy Ar
- Analysis of Reverse-Biased Electrostatic-Discharge-Induced Degradation of GaInAsP/InP Buried Heterostructure Laser Diode