Relationship between Reverse-Biased Electrostatic-Discharge Tolerance and Aging of GaInAsP/InP Buried-Heterostructure Laser Diodes
スポンサーリンク
概要
- 論文の詳細を見る
Degradation due to electrostatic discharge (ESD) is an important reliability issue for GaInAsP/InP buried-heterostructure laser diodes (LDs). Although this degradation mechanism has been previously discussed, the relationship between ESD tolerance and aging has not been investigated. For forward-biased ESD, the degradation mechanism is similar to that of catastrophic optical damage. Therefore, ESD tolerance can be assumed to decrease during an aging test. However, the relationship between reverse-biased ESD tolerance and aging is less clear. We investigated this relationship, focusing particularly on reverse bias, and observed a decrease in ESD tolerance owing to aging. Specifically, the ESD tolerances decreased by approximately 30 and 70% for facet-coated and uncoated GaInAsP/InP Fabry–Perot LDs, respectively, as a result of aging longer than 3000 h. We determined that facet coating is effective in suppressing the reduction in ESD tolerance caused by aging.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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HAMADA Kotaro
Analytical Characterization Center, Sumitomo Electric Industries, Ltd.
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Nakabayashi Takashi
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Ichikawa Hiroyuki
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Yamaguchi Akira
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Ichikawa Hiroyuki
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Yamaguchi Akira
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Hamada Kotaro
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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- Energy-Filtered Secondary-Electron Imaging for Nanoscale Dopant Mapping by Applying a Reverse Bias Voltage
- Electrostatic-Discharge-Induced Degradation Caused by Argon Ion Bombardment in Facet-Coating Process of GaInAsP/InP Laser Diode
- Relationship between Reverse-Biased Electrostatic-Discharge Tolerance and Aging of GaInAsP/InP Buried-Heterostructure Laser Diodes
- Failure Analysis of InP-Based Edge-Emitting Buried Heterostructure Laser Diodes Degraded by Forward-Biased Electrostatic Discharge Tests
- Sensitive Site-Specific Dopant Mapping in Scanning Electron Microscopy on Specimens Prepared by Low Energy Ar
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