Yamaguchi Akira | Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
スポンサーリンク
概要
- 同名の論文著者
- Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japanの論文著者
関連著者
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HAMADA Kotaro
Analytical Characterization Center, Sumitomo Electric Industries, Ltd.
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Ichikawa Hiroyuki
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Yamaguchi Akira
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Ichikawa Hiroyuki
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Yamaguchi Akira
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Hamada Kotaro
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Nakabayashi Takashi
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Matsukawa Shinji
Analysis Technology Research Center Sumitomo Electric Industries Ltd.
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Nakabayashi Takashi
Optical Transmission Components Division, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Ito Masashi
Optical Transmission Components Division, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Matsukawa Shinji
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
著作論文
- Electrostatic-Discharge-Induced Degradation Caused by Argon Ion Bombardment in Facet-Coating Process of GaInAsP/InP Laser Diode
- Relationship between Reverse-Biased Electrostatic-Discharge Tolerance and Aging of GaInAsP/InP Buried-Heterostructure Laser Diodes
- Failure Analysis of InP-Based Edge-Emitting Buried Heterostructure Laser Diodes Degraded by Forward-Biased Electrostatic Discharge Tests