Nakabayashi Takashi | Optical Transmission Components Division, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
スポンサーリンク
概要
- Nakabayashi Takashiの詳細を見る
- 同名の論文著者
- Optical Transmission Components Division, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japanの論文著者
関連著者
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Nakabayashi Takashi
Optical Transmission Components Division, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Ichikawa Hiroyuki
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Hamada Kotaro
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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HAMADA Kotaro
Analytical Characterization Center, Sumitomo Electric Industries, Ltd.
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Yamaguchi Akira
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Ichikawa Hiroyuki
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Ito Masashi
Optical Transmission Components Division, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Yamaguchi Akira
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Fukuda Chie
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Kumagai Akiko
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Fukuda Chie
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
著作論文
- Facet Passivation of GaInAsP/InP Edge-Emitting Laser Diode by Aluminum Ultrathin Layer Insertion
- Electrostatic-Discharge-Induced Degradation Caused by Argon Ion Bombardment in Facet-Coating Process of GaInAsP/InP Laser Diode
- Analysis of Reverse-Biased Electrostatic-Discharge-Induced Degradation of GaInAsP/InP Buried Heterostructure Laser Diode