Facet Passivation of GaInAsP/InP Edge-Emitting Laser Diode by Aluminum Ultrathin Layer Insertion

概要

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We investigated the suppression of facet degradation in GaInAsP/InP edge-emitting laser diodes (LDs). And we demonstrated that facet degradation is successfully suppressed using facet passivation by inserting an aluminum thin layer to the interface between the semiconductor facet and the facet coating film. The ultrathin aluminum layer was approximately 20 Å thick. From photoelectron spectroscopy analysis of the passivated surface, it was found that this passivation is effective in reducing surface recombination. This reduction effect is caused by the suppression of both phosphorus shortage and oxidation. To investigate the passivation effect, we evaluated the tolerance to facet degradation by high-current injection test up to 600 mA and electrostatic discharge test up to 1.2 kV. Although about half of the tested LDs without passivation were degraded, all the LDs with passivation survived. This facet passivation method can suppress facet degradation markedly and it can be applied to not only GaInAsP/InP LD but also other InP-based LDs.
2008-10-25