Characterization of SiNx/GaxIn1-xAs Interface using Hard X-ray Photoemission Spectroscopy
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概要
- 論文の詳細を見る
The SiNx/GaxIn1-xAs interface has been characterized, using the hard X-ray photoemission spectroscopy (HX-PES). In the specimen fabrication, the GaxIn1-xAs surface was oxidized intentionally prior to the SiNx deposition. The HX-PES analyses have clarified that the intentional oxidation increases the oxides of Ga, In, and As at the interface. However, very little difference has been found in the GaxIn1-xAs valence band spectra. The oxidation process has caused no effect on the band bending of GaxIn1-xAs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-09-15
著者
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Kimura Atsushi
Analysis Technology Research Center Sumitomo Electric Industries Ltd.
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Ito Masashi
Optical Transmission Components Division, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Kimura Atsushi
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Saito Yoshihiro
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Nakamura Motonori
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Yamaguchi Koji
Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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