Low-Voltage-Driven Bottom-Gate Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors with High Dielectric Constant Oxide/Polymer Double-Layer Dielectric

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In this study, we report on the fabrication of a low-voltage-driven bottom-gate amorphous indium–gallium–zinc-oxide (a-IGZO) thin-film transistor with a high-$k$ oxide/polymer double-layer dielectric on a glass substrate. The hybrid double-layer dielectric was formed through a sequential process of e-beam evaporation of 300-nm-thick amorphous high-$k$ oxide (SiO2–CeO2 mixture) and spin coating of poly(4-vinylphenol) (PVP). The channel layer was deposited by rf magnetron cosputtering with InGaZO4 and ZnO dual targets at room temperature in argon and oxygen mixed-gas atmosphere. The room-temperature-deposited a-IGZO channel with the hybrid double-layer dielectric exhibits the operating characteristics of a threshold voltage of 1.7 V, drain-source current on/off modulation ratio ($I_{\text{on}}/I_{\text{off}}$) of ${\sim}2.9\times 10^{4}$, and field effect mobility of 0.97 cm2 V-1 s-1 at 5 V.
2007-07-15