Effect of Interdot Coulomb Repulsion on Charge Transport of Parallel Two Single-Electron Transistors
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概要
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The charge transport behaviors of two single-electron transistors (SETs) sitting in parallel are investigated using the Anderson model with two impurity levels. Interdot Coulomb interactions as well as intradot Coulomb interactions are included in the model. The nonequilibrium Keldysh–Green's function technique is used to calculate the current–voltage characteristics of this system. Considering the lowest order coupling between dots and electrodes, analytic spectral functions are calculated using the equation of motion method. We found that the interdot Coulomb interactions not only lead to interdot Coulomb blockade effects but also create negative differential conductances. In addition, the hysteretic effects arising from interface traps or defects are also investigated. SETs could be good detectors for determining interface acceptor-type or donor-type traps of quantum dots (QDs).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-15
著者
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Li Pei-wen
Department Of Electrical Engineering National Central University
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Kuo David
Department of Electrical Engineering, National Central University, Chung-Li, Taiwan 320, Republic of China
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Kuo David
Department of Electrical Engineering and Department of Physics, National Central University, Chungli 320 Taiwan
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Li Pei-Wen
Department of Electrical Engineering, National Central University, Chung-Li, Taiwan 320, Republic of China
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