Thermoelectric Properties of Double Quantum Dots Embedded in a Nanowire
スポンサーリンク
概要
- 論文の詳細を見る
We theoretically investigate the thermoelectric properties of a serial double quantum dot junction system. A two-level Anderson model including electron hoppings and intradot Coulomb interactions as well as interdot Coulomb interactions is employed to simulate the system. The charge and heat currents in the Coulomb blockade regime are calculated by Keldysh Green's function technique. The electrical conductance, Seebeck coefficient, electronic thermal conductance, and figure of merit ($\mathit{ZT}$) of the system are calculated in the linear response regime. We find that the figure of merit $\mathit{ZT}$ is markedly reduced by the size fluctuation and Coulomb interactions.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2011-02-25
著者
関連論文
- Electrically-driven Spontaneous Emission Spectrum of a Single Quantum Dot(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Optical and Electronic Characteristics of Germanium Quantum Dots Formed by Selective Oxidation of SiGe/Si-on-Insulator
- Bistability in the Tunnelling Current through a Ring of N Coupled Quantum Dots
- Tunneling Current Through a Single Germanium Quantum Dot
- Negative Differential Resistance Arising from Tunneling Current through Multiple Quantum Dots
- Thermoelectric Properties of Multiple Quantum Dots Junction System
- Effect of Interdot Coulomb Repulsion on Charge Transport of Parallel Two Single-Electron Transistors
- Bipolar Thermoelectric Effect in a Serially Coupled Quantum Dot System
- Thermoelectric Effects of Multiple Quantum Dot Junctions in the Nonlinear Response Regime
- Stark Effect on Exciton Complexes of a Single Quantum Dot Embedded in a p–n Junction
- Thermoelectric Properties of Double Quantum Dots Embedded in a Nanowire