Electrically-driven Spontaneous Emission Spectrum of a Single Quantum Dot(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
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概要
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We present theoretical studies on the spontaneous emission spectrum of a single self-assembled InAs/GaAs quantum dot (SAQD) embedded in a p-n junction under bias via Keldysh's non-equilibrium Green's function method. For this open system, the emission spectrum can display four coexisting peaks, corresponding to the recombination of exciton, positive and negative trions, and biexciton, even though there is only a single quantum dot. The integrated intensities of the exciton and biexciton peaks increase, respectively, linearly and quadratically with tunnelling rates.
- 社団法人日本物理学会の論文
- 2005-02-15
著者
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Kuo D
Department Of Electrical Engineering National Central University
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KUO David
Department of Electrical Engineering, National Central University
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CHANG Yia
Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign
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Chang Yia
Department Of Physics And Materials Research Laboratory University Of Illinois At Urbana-champaign
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Kuo David
Department Of Electrical Engineering National Central University
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Kuo David
Department of Electrical Engineering and Department of Physics, National Central University, Chungli 320 Taiwan
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Chang Yia-Chung
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.
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