Optical and Electronic Characteristics of Germanium Quantum Dots Formed by Selective Oxidation of SiGe/Si-on-Insulator
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概要
- 論文の詳細を見る
Germanium quantum dots embedded in a SiO2 matrix fabricated by selective oxidation of SiGe-on-insulator structure were examined by high-resolution transmission electron microscopy, cathodoluminescence spectroscopy, and spectroscopic ellipsometry. The dot size and crystallite morphology were strongly dependent on thermal oxidation conditions. Visible photoemissions from Ge dots were observed at room temperature and they exhibited pronounced blueshifts of peak energies with increasing oxidation time, which can be correlated to the change in dot size, shape, or crystalline structure transition. The extracted refractive index of Ge dots examined by spectroscopic ellipsometry is lower than that of bulk Ge, which is also correlated to the nanocrystal size effects.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-11-15
著者
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LI Pei-Wen
Department of Mechanical Engineering, Kyoto University
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Li Pei-wen
Department Of Electrical Engineering National Central University
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KUO David
Department of Electrical Engineering, National Central University
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Liao Wei-Ming
Department of Electrical Engineering, National Central University, ChungLi, Taiwan 320, R.O.C.
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Tsai Ming-J.
Electronics Research and Service Organization, ITRI, Hsinchu, Taiwan 300, R.O.C
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Tsai Ming-j.
Electronics Research And Service Organization Itri
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Liao Wei-ming
Department Of Electrical Engineering National Central University
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Kuo David
Department Of Electrical Engineering National Central University
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Kuo David
Department of Electrical Engineering and Department of Physics, National Central University, Chungli 320 Taiwan
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