Temperature Stability of Dynamic-Threshold Mode SiGe p-Metal–Oxide–Semiconductor Field Effect Transistors
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概要
- 論文の詳細を見る
In this study, we have systematically investigated the thermal stability of strained silicon–germanium (SiGe) and bulk Si p-metal–oxide–semiconductor field-effect transistors (MOSFETs) in dynamic-threshold (DT) mode and standard mode operation, respectively, from 77 to 400 K. Possessing advantages of good carrier confinement and higher carrier mobility in the strained-SiGe material, SiGe DT-MOSFETs exhibit not only enhanced drive current but also better thermal stability for threshold voltage, substrate sensitivity, and low-frequency noise over the entire operating temperature range than their counterpart Si devices. That is very important for radio-frequency micropower analogue and digital integrated circuits applications.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-12-15
著者
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LI Pei-Wen
Department of Mechanical Engineering, Kyoto University
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Li Pei-wen
Department Of Electrical Engineering National Central University
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Liao Wei-Ming
Department of Electrical Engineering, National Central University, ChungLi, Taiwan 320, R.O.C.
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Liao Wei-ming
Department Of Electrical Engineering National Central University
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