Transient Behavior of Germanium Quantum-dot Resonant Tunneling Diode

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• LI Pei-Wen

  Department of Mechanical Engineering, Kyoto University

• Li Pei-wen

  Department Of Electrical Engineering National Central University

• LAI Wei-Ting

  Department of Electrical Engineering, National Central University

• Lai Wei-ting

  Department Of Electrical Engineering National Central University

関連論文

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• Ellipsometric Study of the Optical Properties of InGaAsN Layers
• Optical and Electronic Characteristics of Germanium Quantum Dots Formed by Selective Oxidation of SiGe/Si-on-Insulator
• Temperature Stability of Dynamic-Threshold Mode SiGe p-Metal–Oxide–Semiconductor Field Effect Transistors
• Transient Behavior of Germanium Quantum-dot Resonant Tunneling Diode
• Fabrication of Ge Quantum-dots by Oxidation of Si_Ge_x-on-insulator Nanowires and its Applications to Resonant Tunneling Diodes and Single-electron/Single-hole Transistors
• Tunneling Current Through a Single Germanium Quantum Dot
• Effect of Interdot Coulomb Repulsion on Charge Transport of Parallel Two Single-Electron Transistors

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