Ellipsometric Study of the Optical Properties of InGaAsN Layers

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概要

• 論文の詳細を見る

• We report the optical properties of the quaternary compound semiconductor, In_xGa_<1-x>As_<1-y>N_y, with various indium and nitrogen contents. The refractive indices of In_xGa_<1-x>As_<1-y>N_y epilayers were systematically studied by variable angle spectroscopic ellipsometry(VASE)in the wavelength range of 400 to 700 nm. Analysis of the spectroscopic ellipsometry data indicated that the refractive index of In_xGa_<1-x>As_<1-y>N_y increases in proportion to the indium and nitrogen contents. It is also found that the rate of increase of the refractive index in In_xGa_<1-x>As_<1-y>N_y with increasing nitrogen content is much larger than that with increasing indium content. The transition energy E_1 as a function of N composition for In_<0.3>Ga_<0.7>As_<1-y>N_y epilayers was also examined based on the second-deribative spectra of the dielectric function.

• 社団法人応用物理学会の論文
• 2000-09-15

著者

• LI Pei-Wen

  Department of Mechanical Engineering, Kyoto University

• Li Pei-wen

  Department Of Mechanical Engineering Kyoto University

• Li Pei-wen

  Department Of Electrical Engineering National Central University

• Guang Huei-chen

  Department Of Electronic Engineering I-shou University

• LI Nein-Yi

  Emcore Photovoltaics, Emcore Corporation

• Li Nein-yi

  Emcore Photovoltaics Emcore Corporation

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• Transient Behavior of Germanium Quantum-dot Resonant Tunneling Diode
• Fabrication of Ge Quantum-dots by Oxidation of Si_Ge_x-on-insulator Nanowires and its Applications to Resonant Tunneling Diodes and Single-electron/Single-hole Transistors
• Tunneling Current Through a Single Germanium Quantum Dot
• Effect of Interdot Coulomb Repulsion on Charge Transport of Parallel Two Single-Electron Transistors

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