Electrical and Electromechanical Properties of Pb(Mg1/3Nb2/3)O3 (50%)–PbTiO3 (50%) Thin Films Prepared by Chemical Solution Deposition
スポンサーリンク
概要
- 論文の詳細を見る
Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMNT, 50/50) thin films were prepared on Pt/Ti/SiO2/Si substrates by chemical solution deposition. The starting composition was Pb/Mg/Nb/Ti = 110/20/33/50. By inserting a nucleation layer of PbTiO3 and employing lamp annealing, pyrochlore formation could be suppressed. The PMNT film rapidly annealed at 800°C exhibited a remanent polarization and a coercive field of 16 μC/cm2 and 82 kV/cm, respectively. A broad dielectric maximum at around 240°C is observed. The field-induced displacement was measured by scanning probe microscopy, and the effective piezoelectric coefficient ($d_{33}$) was 84 pm/V. Their temperature dependence is mild in the range between $-20$ and 140°C.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-02-15
著者
-
Ichinose Noboru
School Of Science And Engineering Waseda
-
MAIWA Hiroshi
Department of Materials Science and Engineering, Shonan Institute of Technology
-
Ichinose Noboru
School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjyuku-ku, Tokyo 169-8555, Japan
-
Maiwa Hiroshi
Department of Human and Environmental Science, Shonan Institute of Technology, 1-1-25 Tsujido Nishikaigan, Fujisawa, Kanagawa 251-8511, Japan
関連論文
- Thickness Dependence of the Electrical and Electromechanical Properties of Pb(Zr, Ti)O_3 Thin Films
- Preparation and Properties of (Pb, Ca)TiO_3 Thin Films by Multiple-Cathode Sputtering
- Characteristic Change due to Argon Ion Etching and Heat Treatment of (Pb, La)TiO_3 Thin Films Fabricated by Multiple Cathode Sputtering
- Electrical Properties of (Pb, La)Ti0_3 Thin Films Fabricated by Multiple Cathode Sputtering
- Film Thickness Dependence of Dielectric Properties of BaTiO_3 Thin Films Prepared by Sol-Gel Method ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Fatigue and Refreshment of (Pb, La)TiO_3 Thin Films by Multiple Cathode Sputtering ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Preparation and Properties of Ru and RuO_2 Thin Film Electrodes for Ferroelectric Thin Films ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Preparation and Properties of Ferroelectric BaTiO_3 Thin Films by Sol-Gel Process
- Crystalline Structure of PbTiO_3 Thin Films by Multiple Cathode Sputtering
- Dielectric Properties of (Pb, La)TiO_3 Thin Films by Multiple-Cathode Sputtering and Its Application to Dynamic Random Access Memory Capacitors
- Crystal Growth of Pb(In_Nb_)0_3-Pb(Mg_Nb_)0_3-PbTiO_3 and Pb(Sc_Nb_0_3-Pb(Mg_Nb_)03-PbTi0_3 Piezoelectric Single Crystals Using the Solution Bridgman Method
- Large Piezoelectric Constant of High-Curie-Temperature Pb(In_Nb_)O_3-Pb(Mg_Nb_)-PbTiO_3 Ternary Single Crystal near Morphotropic Phase Boundary
- Pyroelectric Infrared Sensor Using Modified PbTiO_3 Ceramics
- Measurement of Piezoelectric Displacements of Pb(Zr, Ti)O_3 Thin Films Using a Double-Beam Interferometer
- Surface Structure of ZnO Single Crystals Analysed by Ion Scattering Spectroscopy
- Nitrogen Ion Behavior on Polar Surfaces of ZnO Single Crystals
- Measurement of Electric-Field-Induced Displacements in(Pb, La)TiO_3 Thin Films Using Scanning Probe Microscopy
- Dielectric and Piezoelectric Properties of 0.93Pb(Zn_Nb_)O_3-0.07PbTiO_3 Piezoelectric Single Crystals for Medical Array Transducers
- Temperature Dependence of Dielectric and Piezoelectric Properties of Pb (Zn_Nb_) O_3-PbTiO_3 Piezoelectric Single Crystals(Electrical Properties of Condensed Matter)
- Diffusion Mechanism of Oxide Ions in Mn-Zn -ferrites
- Phase Stability, Dielectric and Piezoelectric Properties of the Pb(Sc_Nb_)O_3-Pb(Zn_Nb_)O_3-PbTiO_3 Ternary Ceramic Materials
- Pyroelectric Infrared Sensor Using Modified PbTiO_3 and Its Applications : P: Pyroelectrics
- Electrical and Electromechanical Properties of PbZrO_3 Thin Films Prepared by Chemical Solution Deposition
- Functionally Gradient Piezoelectric Ceramics for Ultrasonic Transducers
- Dielectric and Piezoelectric Properties of Pb(In_Nb_)O_3-Pb(Mg_Nb_)O_3-PbTiO_3 Ternary Ceramic Materials near the Morphotropic Phase Boundary
- Low-Temperature Sintering of Pb(Ni1/3Nb2/3)O3–PbZrO3–PbTiO3 Ceramics via Single-Step Calcination Process without Sintering Additives
- Surface Structure of ZnO Single Crystals Analysed by Ion Scattering Spectroscopy
- Thickness Dependence of the Electrical and Electromechanical Properties of Pb(Zr,Ti)O3 Thin Films
- Dielectric and Piezoelectric Properties of Pb[(In1/2Nb1/2)0.24(Mg1/3Nb2/3)0.42Ti0.34]O3 Single Crystals
- High-Curie-Temperature Pb(Zr,Ti)O3 Ceramic Actuator Cofired with Pure Silver Internal Electrodes
- Growth of Single Crystals of High-Curie-Temperature Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 Ternary Systems near Morphotropic Phase Boundary
- Electrical and Electromechanical Properties of Pb(Mg1/3Nb2/3)O3 (50%)–PbTiO3 (50%) Thin Films Prepared by Chemical Solution Deposition
- Lead-Free Piezoelectric (K,Na)NbO3 Thin Films Derived from Metal Alkoxide Precursors
- Dielectric and Piezoelectric Properties of 0.93Pb(Zn1/3Nb2/3)O3–0.07PbTiO3 Piezoelectric Single Crystals for Medical Array Transducers
- Dielectric and Piezoelectric Properties of Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 Ternary Ceramic Materials near the Morphotropic Phase Boundary
- Nitrogen Ion Behavior on Polar Surfaces of ZnO Single Crystals