Growth of Single Crystals of High-Curie-Temperature Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 Ternary Systems near Morphotropic Phase Boundary
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概要
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Crystal growth in $x$Pb(In1/2Nb1/2)O3–$y$Pb(Mg1/3Nb2/3)O3–$z$PbTiO3 (PIMNT100$x$/100$y$/100$z$) ternary systems near the morphotropic phase boundary was investigated by the conventional flux method using PbO and PbO–B2O3 flux. The PIMNT crystals were obtained easily by the slow cooling of a 50PIMNT:40PbO:10B2O3 (mol%) molten solution from 1230°C to 850°C. The PbO–B2O3 flux is effective for PIMNT single crystal growth. The largest PIMNT 16/51/33 crystal had dimensions of about 20 mm $\times$ 10 mm $\times$ 5 mm. The (001) wafers cut from the obtained crystal had transparent and opaque areas. The electron probe X-ray microanalysis (EPMA) results revealed that the compositions of the two areas differ slightly; the Ti content in the opaque area is lower than that in the transparent area. The temperature dependence of the dielectric constant showed a maximum at the tetragonal to cubic phase-transition temperature ($T_{\text{c}}=187$°C), which is 30°C–40°C higher than that for a 0.68Pb(Mg1/3Nb2/3)O3–0.32PbTiO3 (PMNT 68/32) single crystal. A dielectric constant (${\varepsilon_{33}}^{T}/\varepsilon_{0}$) of 4000, a coercive field ($E_{\text{c}}$) of 7.0 kV/cm, an electromechanical coupling factor (${k_{33}}'$) of 80%, and a frequency constant (${N_{33}}'r$) of 1160 Hzm were obtained.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-09-15
著者
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Ichinose Noboru
School Of Science And Engineering Waseda
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HOSONO Yasuharu
Power Supply Materials and Device Laboratory Corporate R&D Center, Toshiba Corporation
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Yamashita Yohachi
Power Supply Materials And Devices Laboratory Corporate R&d Center Toshiba Corporation
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Sakamoto Hideya
School Of Science And Engineering Waseda University
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Hosono Yasuharu
Power Supply Materials and Devices Laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai, Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sakamoto Hideya
School of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan
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Hosono Yasuharu
Power Supply Materials & Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Yamashita Yohachi
Power Supply Materials & Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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