Electronic Properties of Amorphous and Crystalline Ge2Sb2Te5 Films
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概要
- 論文の詳細を見る
Optical and electrical properties of sputtered Ge2Sb2Te5 films in amorphous and crystalline states have been studied. The optical band-gaps of amorphous, cubic (NaCl-type), and hexagonal Ge2Sb2Te5 are 0.74, 0.5, and 0.5 eV, respectively. Electrically, the amorphous and cubic states behave as semiconductors with activation energies of 0.45 and 0.14 eV, while the hexagonal state is metallic. The resistivity decreases slightly at the melting point of ${\sim}600$°C. All the states show $ p$-type thermoelectric power, in which the amorphous and the cubic state have the activation energies of 0.3 and 0.14 eV. Carrier parameters and electronic densities-of-states are estimated and considered.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-10-15
著者
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Tanaka Keiji
Department Of Applied Chemistry Kyushu University
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Kato Takayuki
Department Of Applied Chemistry Faculty Of Science And Engineering Saga University
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Kato Takayuki
Department of Applied Physics, Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan
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