Nanoscale Phase Change in Telluride Films Induced with Scanning Tunneling Microscopes
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概要
- 論文の詳細を見る
Crystallization in amorphous Ge2Sb2Te5 films has been demonstrated using scanning tunneling microscopes. Pulse voltages higher than 3 V applied through W tips produce electrically conductive deformed marks with a diameter larger than ${\sim}50$ nm. Raman scattering spectra show that such marks contain crystalline Te, which indicates that a structural phase change from amorphous to crystalline states is induced. The formation processes of the marks are discussed.
- Japan Society of Applied Physicsの論文
- 2004-05-15
著者
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Sugawara Kentaro
Department Of Applied Physics Graduate School Of Engineering Hokkaido University
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Tanaka Keiji
Department Of Applied Chemistry Kyushu University
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Gotoh Tamihiro
Department Of Applied Physics Graduate School Of Engineering Hokkaido University
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Gotoh Tamihiro
Department of Applied Physics, Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan
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Tanaka Keiji
Department of Applied Physics, Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan
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