Time-of-Flight Photocurrents in Amorphous Semiconductors under Nonequilibrium Trap States

概要

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Characteristic changes in time-of-flight photocurrents induced with photoelectric bias excitation have been studied in amorphous As_2Se_3, Se and Si:H films. If As_2Se_3 films are exposed to bias illumination under electric fields, the transit time of dispersive carriers increases by a factor of 〜2. In Se and Si:H films, bias excitation makes nondispersive photocurrent signals featureless. In all the materials, bias excitation increases the number of collected carriers. These effects observed in photoelectrically biased amorphous semiconductors have been analyzed on the basis of a multiple-trapping model. The result suggests that bias excitation yields two effects: a density increase in shallow trap states and a modification of electric fields.
社団法人応用物理学会の論文
1995-05-15