3元同時スパッタリング法によるLa-Pt-Bi薄膜の作製

概要

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Half-Heusler La-Pt-Bi thin films were prepared by 3-source magnetron sputtering on various single crystal substrates. Single phase, c-axis oriented La-Pt-Bi thin films were successfully obtained on YAlO3(001) substrate. Formation of secondary phases was effectively prevented by precise control of the deposition rate for separate targets, as well as adjustment of the deposition temperature. The crystallinity of LaPtBi thin films is improved by the reduction of lattice mismatch between LaPtBi and substrates. Electrical resistivity of La-Pt-Bi thin films increases with decreasing (increasing) La (Bi) contents. From X-ray photoelectron spectroscopy, double peaks were observed in La 3d orbital. This result suggest the co-existence of orbital with and without charge transfer, which may affect the the electrical properties of La-Pt-Bi thin films. Control of the electronic structure of La is one of the key to improve the electrical property of LaPtBi.