RFマグネトロンスパッタリングによるAIN, AIN-TiN薄膜の作製

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Al-AIN thin films, AIN-TiN multi-layer thin films and Al-Ti-N thin films were prepared by rf magnetron sputtering. AI-AIN thin films were deposited by reactive sputtering in an atmosphere of mixed gas of argon and nitrogen. The products changed from Al to AIN through Al-AIN phase by increasing partial pressure of nitrogen (PN2). The deposition rate and the electrical resistivity as a function of PN2 were also studied. AIN-TiN multi-layer thin films were prepared by depositing of AIN and TiN alternately. Homogeneous Al-Ti-N solid solution thin films could be prepared by reactive sputtering of multi-metal target on the substrates rotating at 11.25rpm. The structure of the films are classified into three phases: wurtzite type solid solution with x=0-0.13 in Al1-xTixN, unknown phase with x=0.20-0.30, NaCl type solid solution with x=0.40-1.0. The optical transmittance of the solid solution thin films varied with the composition x, suggesting that homogeneous solid solution thin films formed by reactive multi-metal target sputtering.
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