二次イオン質量分析法におけるダイナミック深さ測定法

概要

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For the purpose of obtaining meaningful depth profile information in secondary ion mass spectrometry (SIMS), a dynamic depth measuring method employing the total ion monitoring technique has been developed. It was evaluated for Si and GaAs speci mens under oxygen ion bombardment.This method utilizes the enhancement of secondary ion yield which results from the presence of implanted oxygen atoms. The implantation effect of oxygen ions was monitored by measuring the total ion intensity, together with the matrix ion signal, as a function of the sputtering time.From the experimental results it was found that the degree of enhancement is approximately proportional to the concentration of reactive oxygen implanted into Si and GaAs. That is, the etching depth at the saturated value of the total ion intensity corresponds to the projected range of the primary ions. This means that the etching depth during SIMS analysis can be measured with the scale of the sputtering time equivalent to the projected range.
日本質量分析学会の論文