電子衝撃形固体イオン源

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The authors developed a low cost and compact ion source for the extraction of solid ions from a solid material, using a grounded cathode Pierce horizontal type electron gun. As regards the characteristics of the ion source, the Al ion current was about 10 mA, when the primary electron beam current was 200 mA. Boron ions were implanted into a Si wafer using electrostatic deflectors. Density of the boron ion current on the substrate, which was 20 cm away from the crucible, was at 100 μA/cm2 and the total amount of boron implanted on the surface of the Si wafer was 1015 atoms/cm2, when the ion implanting energy was 20 keV. The authors analyzed the boron film deposited with ion beam plating on a substrate of Ta, when the ion energy was 20 keV. The mass spectrum in an ion microprobe analyzer showed that contaminations, except for C, N and O, were about 1/1000 of the concentration of boron.
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